Effect of Si lattice strain on the reliability characteristics of ultrathin SiO2 on a 4° tilted wafer
- 21 January 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (3) , 386-388
- https://doi.org/10.1063/1.1435404
Abstract
The electrical and structuralcharacteristics of an ultrathin gate dielectric, thermally grown on 4° tilted wafer has been investigated. Compared with a control wafer, a relaxation of the Si lattice strain at the SiO 2 / Si (001) interface was observed for the 4° tilted wafer, which was confirmed by medium energy ion scattering spectroscopy. A significant improvement in the reliability characteristics of a metal–oxide–semiconductor (MOS) capacitor, with a 2.5-nm-thick gate oxide, grown on a tilt wafer was observed. This improvement in reliability can be explained by the relaxation of strain at the SiO 2 / Si interface. An ultrathin gate dielectric grown on a tilt wafer represents a promising alternative for gate dielectric applications in future MOS devices.Keywords
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