Fabrication of GaN photonic crystals for 400 nm wavelength
- 30 September 2001
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 57-58, 843-849
- https://doi.org/10.1016/s0167-9317(01)00441-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Photoluminescence Characterisation of Triangular Lattices of Holes and Pillars Etched in GaN EpilayersPhysica Status Solidi (b), 1999
- GaN: Processing, defects, and devicesJournal of Applied Physics, 1999
- Fabrication of two-dimensional photonic lattices in GaAs: the regular graphite structuresSuperlattices and Microstructures, 1997
- Photonic crystals: putting a new twist on lightNature, 1997
- Implantation and Dry Etching of Group-III-Nitride SemiconductorsMRS Bulletin, 1997
- Photonic band gaps in a two-dimensional graphite structurePhysical Review B, 1995
- Strong localization of photons in certain disordered dielectric superlatticesPhysical Review Letters, 1987
- Inhibited Spontaneous Emission in Solid-State Physics and ElectronicsPhysical Review Letters, 1987