Destructive single-event effects in semiconductor devices and ICs
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- 9 July 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 50 (3) , 603-621
- https://doi.org/10.1109/tns.2003.813137
Abstract
Developments in the field of destructive single-event effects over the last 40 years are reviewed. Single-event latchup, single-event burnout, single-event gate rupture, and single-event snap-back are discussed beginning with the first observation of each effect, its phenomenology, and the development of present day understanding of the mechanisms involved.Keywords
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