Improved sidewall morphology on dry-etched SiO2 masked GaN features
- 1 April 1998
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 27 (4) , 175-178
- https://doi.org/10.1007/s11664-998-0382-y
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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