Broad-area photoelectrochemical etching of GaN
- 30 January 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (3) , 245-246
- https://doi.org/10.1049/el:19970121
Abstract
A photoenhanced wet chemical etching process for GaN using KOH solution and broad-area Hg lamp illumination is demonstrated. Results are discussed for n+ GaN, non-intentionally doped GaN, and p-GaN samples.Keywords
This publication has 7 references indexed in Scilit:
- Schottky barrier properties of various metals on n-type GaNSemiconductor Science and Technology, 1996
- Room-temperature photoenhanced wet etching of GaNApplied Physics Letters, 1996
- Wet chemical etching of AlNApplied Physics Letters, 1995
- Broad‐Area Photoelectrochemical Etching of n‐Type Beta ‐ SiCJournal of the Electrochemical Society, 1993
- Chemical Etching of Indium NitrideJournal of the Electrochemical Society, 1992
- Dopant Selective Photoelectrochemical Etching of GaAs HomostructuresJournal of the Electrochemical Society, 1991
- The Laser‐Controlled Micrometer‐Scale Photoelectrochemical Etching of III–V SemiconductorsJournal of the Electrochemical Society, 1991