Influence of surface defects on the electrical behavior of aluminum-porous silicon junctions
- 23 May 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (21) , 2827-2829
- https://doi.org/10.1063/1.111438
Abstract
Using transient‐current measurements on porous silicon layers made on p+ silicon substrate, we characterize the surface defects of the porous silicon material, i.e., the defects located at the interface between porous silicon and a thin layer of native oxide. An energy location near midgap (these defects can be efficient radiative lifetime killers) and a trap concentration in close agreement with the number of trivalent silicon defects—as measured by electron spin resonance—are deduced.Keywords
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