Reverse I-V characteristics of Au/semi-insulating InP (100)
- 1 May 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (5) , 709-711
- https://doi.org/10.1088/0268-1242/8/5/016
Abstract
The I-V characteristics of Au/semi-insulating InP (100) under reversed bias have been measured between 230 K and 290 K. A simple model based on the thermionic field emission theory (TFE) is proposed to describe this system. Based on this model, the value of the bandgap obtained from the I-V characteristics is in reasonable agreement with the literature. At room temperature, the corresponding fitted values of the barrier height Phi b and the series bulk resistance Rb are 0.68+or-0.05 V and 1.3207 Omega respectively.Keywords
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