A study of the Cr and Fe deep acceptors in InP by the nuclear transmutation back doping technique

Publisher Website
Google Scholar
Abstract
This paper reports the use of the nuclear transmutation back doping technique for studying the deep Cr and Fe acceptors in InP. The authors have demonstrated the changes in the electrical characteristics and the photoconductivity spectra for the InP materials studied brought about by this shallow donor compensation technique. In InP:Cr, it has been shown that the Evb+0.95 eV level belongs to the Cr2- lower charge state. In InP:Fe, it has been possible to confirm some of the optical transitions involving both Fe3- and Fe2-. In particular, this work has confirmed that the deep level Ecb-0.66 eV is the ground state of Fe2-. This investigation has also allowed the authors to estimate the Fe doping concentration in a heavily doped sample and this has been found to be approximately 4.8*1016 cm-3.
Keywords

This publication has 11 references indexed in Scilit: