Using Temperature to Tune Film Roughness: Nonintuitive Behavior in a Simple System
- 24 July 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 85 (4) , 800-803
- https://doi.org/10.1103/physrevlett.85.800
Abstract
Ag(100) homoepitaxy constitutes one of the simplest systems in which to study thin-film growth. Yet we find that the roughness variation with temperature is extraordinarily complex. Specifically, as the deposition temperature is reduced from 300 to 50 K, the roughness of 25 monolayer films first increases, then decreases, then increases again. A transition from mound formation to self-affine (semifractal) growth occurs at K. The underlying mechanisms are postulated. An atomistic model incorporating these mechanisms reproduces the experimental data quantitatively.
Keywords
This publication has 19 references indexed in Scilit:
- Instability in Molecular Beam Epitaxy due to Fast Edge Diffusion and Corner Diffusion BarriersPhysical Review Letters, 1999
- Thickness dependence of the morphology of ultrathin quench condensed gold filmsPhysical Review B, 1998
- Submonolayer island formation and the onset of multilayer growth during Ag/Ag(100) homoepitaxySurface Science, 1998
- Step-Adatom Attraction as a New Mechanism for Instability in Epitaxial GrowthPhysical Review Letters, 1996
- Morphology Transition and Layer-by-Layer Growth of Rh(111)Physical Review Letters, 1996
- Transition to Multilayer Kinetic Roughening for Metal (100) HomoepitaxyPhysical Review Letters, 1995
- Observation of a growth instability during low temperature molecular beam epitaxyPhysical Review Letters, 1994
- Continuum models of crystal growth from atomic beams with and without desorptionJournal de Physique I, 1991
- Reentrant layer-by-layer growth during molecular-beam epitaxy of metal-on-metal substratesPhysical Review Letters, 1990
- Reflection High-Energy Electron Diffraction (RHEED) Oscillations at 77 KPhysical Review Letters, 1989