Step-Adatom Attraction as a New Mechanism for Instability in Epitaxial Growth
- 25 November 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 77 (22) , 4584-4587
- https://doi.org/10.1103/physrevlett.77.4584
Abstract
We show that short-range attraction of adatoms towards clusters and ascending steps leads to an instability towards mound formation in epitaxial growth. This instability is studied both analytically and via Monte Carlo simulations on bcc/fcc(100) surfaces. The origin of this instability in terms of second-layer nucleation and its implications for surface morphology and interpretation of recent experiments are also discussed.Keywords
This publication has 17 references indexed in Scilit:
- High-pressure Raman scattering of the stretching mode in nitrogen along the 300-K isothermPhysical Review B, 1996
- Dynamic Evolution of Pyramid Structures during Growth of Epitaxial Fe001FilmsPhysical Review Letters, 1995
- Stable and unstable growth in molecular beam epitaxyPhysical Review Letters, 1994
- Real-time laser-light scattering studies of surface topography development during GaAs MBE growthJournal of Crystal Growth, 1993
- Adatom motion to lattice steps: A direct viewPhysical Review Letters, 1993
- Scaling analysis of surface roughness and Bragg oscillation decay in models for low-temperature epitaxial growthSurface Science, 1992
- Continuum models of crystal growth from atomic beams with and without desorptionJournal de Physique I, 1991
- Low-temperature epitaxial growth of thin metal filmsPhysical Review B, 1990
- Step Motion on Crystal Surfaces. IIJournal of Applied Physics, 1969
- Atomic View of Surface Self-Diffusion: Tungsten on TungstenThe Journal of Chemical Physics, 1966