Charge Transport Phenomena in MOS System

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Abstract
Drift phenomena of positive charges, which are induced by “hydrogen heating” in silicon dioxide, have been investigated. A new experimental method, in MOS transistor structure and discussions on the results are given. It is found (1) that the drift of the charge species occurs under externally applied field with an activation energy of 0.31 [eV], (2) that in silicon dioxide, the positive charge is bound in a potential well, which is “wall-like” in the vicinity of the metal-oxide interface and “slope-like” in the vicinity of the silicon-oxide interface, (3) that there is a potential minimum or “pocket” in front of the "wall-like" boundary, and (4) that the drift current is proportional to the square or higher powers of applied voltage, but the mechanism is not yet clear.

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