Epitaxial layers of indium nitride by microwave-excited metalorganic vapor phase epitaxy
- 10 January 1990
- Vol. 41 (4-6) , 1071-1073
- https://doi.org/10.1016/0042-207x(90)93870-o
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Pseudofunction theory of the electronic structure of InNPhysical Review B, 1988
- Band structure of InNSuperlattices and Microstructures, 1987
- Optical band gap of indium nitrideJournal of Applied Physics, 1986
- Pseudopotential band structure of indium nitridePhysical Review B, 1986
- Mechanisms of reactive sputtering of indium I: Growth of InN in mixed Ar-N2 dischargesThin Solid Films, 1980
- Preparation and optical properties of Ga1−xInxN thin filmsJournal of Applied Physics, 1975
- Some properties of inn films prepared by reactive evaporationJournal of Electronic Materials, 1974
- Electrical and Optical Properties of rf-Sputtered GaN and InNApplied Physics Letters, 1972
- Thermal stability of indium nitride at elevated temperatures and nitrogen pressuresMaterials Research Bulletin, 1970
- Über die Kristallstrukturen von Cu3N, GaN und InN Metallamide und MetallnitrideZeitschrift für anorganische und allgemeine Chemie, 1938