Electron-spin-resonance center of dangling bonds in undoped
Open Access
- 15 February 1999
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 59 (7) , 4849-4857
- https://doi.org/10.1103/physrevb.59.4849
Abstract
A variety of electron-spin-resonance (ESR) spectra of dangling bond (g=2.0055) in undoped hydrogenated amorphous silicon (a-Si:H) have been measured by the echo-detected ESR of pulsed ESR as well as the usual continuous-wave (cw) ESR for a wide range of two experimental parameters of microwave frequency (ν=3–34 GHz) and 29Si content (p=1.6, 4.7, 9.1 at. %). Using those spectra, we have carried out spectral simulations on the whole dangling bond spectrum (a primary line and 29Si hf structure), and also have simulated ν and p dependence of the spectra. From detailed simulation analyses, we confirmed a previous identification of the dangling bond center by Stutzmann and Biegelsen [Phys. Rev. B 40, 9834 (1989)], and raised the reliability of ESR parameters; isotropic and anisotropic 29Si hyperfine interactions were determined to be approximately 7.4 and 2.1 mT, respectively, and g∥=2.0039, g⊥=2.0065. The ESR parameters indicate that the dangling bond center is localized predominantly on a single Si atom and is characterized as strongly p like, which are consistent with the case of the dangling bond at the interface between crystalline Si and SiO2, the Pb centerKeywords
This publication has 33 references indexed in Scilit:
- Microscopic nature of coordination defects in amorphous siliconPhysical Review B, 1989
- Paramagnetic centers at Si-SiO2 interfaces in silicon-on-insulator filmsApplied Physics Letters, 1987
- electron-nuclear-double-resonance-detected ESR of light-soaked undopeda-Si:HPhysical Review B, 1987
- Electron-nuclear double resonance of dangling-bond centres in a-Si:HSolid State Communications, 1987
- Defects in Amorphous Silicon: A New PerspectivePhysical Review Letters, 1986
- Hyperfine studies of dangling bonds in amorphous siliconPhysical Review B, 1986
- 2 9Si hyperfine structure of unpaired spins at the Si/SiO2 interfaceApplied Physics Letters, 1983
- Electron Spin Resonance of Doped Glow‐Discharge Amorphous SiliconPhysica Status Solidi (b), 1981
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977
- Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon CarbidePhysical Review Letters, 1969