Heteroepitaxy of insulator/metal/silicon structures: CaF2/NiSi2/Si(111) and CaF2/CoSi2/Si(111)
- 14 July 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (2) , 64-66
- https://doi.org/10.1063/1.97353
Abstract
Epitaxial insulator (CaF2) layers have been grown on epitaxial metal (CoSi2 and NiSi2) layers on Si(111) by molecular beam epitaxy. The surface morphology and bulk crystallinity are much better for growth on NiSi2, with scanning electron microscopy revealing only small triangular hillocks, and channeling minimum yields as low as 3% measured in the CaF2 using 2.5 MeV 4He+ ions. CaF2 layers grown at 650 °C on CoSi2 consist of a mixture of regions either aligned or rotated 180° with respect to the CoSi2 lattice, while CaF2 layers grown at 550 °C on NiSi2 are of a single orientation, regardless of the orientation of the NiSi2 with respect to the Si substrate.Keywords
This publication has 8 references indexed in Scilit:
- Molecular beam epitaxy growth and applications of epitaxial fluoride filmsJournal of Vacuum Science & Technology A, 1986
- Growth of an epitaxial insulator-metal-semiconductor structure on Si by molecular beam epitaxyApplied Physics Letters, 1986
- Novel triode device using metal-insulator superlattice proposed for high-speed responseElectronics Letters, 1986
- Strain measurement of epitaxial CaF2 on Si (111) by MeV ion channelingApplied Physics Letters, 1985
- Epitaxial growth and characterization of CaF2 on SiJournal of Applied Physics, 1985
- Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiEpitaxial StructuresPhysical Review Letters, 1983
- Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and SiApplied Physics Letters, 1982
- Silicon/metal silicide heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1980