Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates
- 23 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 943-945
- https://doi.org/10.1109/iedm.1996.554137
Abstract
We report on the first demonstration of an enhancement-mode p-channel GaAs metal oxide field effect transistor (MOSFET) realized directly on GaAs semi-insulating substrate with a fully ion-implant technology. The device, with a 40/spl times/50 /spl mu/m/sup 2/ gate geometry, shows very good DC characteristics with transconductance of 0.3 mS/mm and an excellent gate breakdown field greater then 3 MV/cm.Keywords
This publication has 2 references indexed in Scilit:
- Recombination velocity at oxide–GaAs interfaces fabricated by in situ molecular beam epitaxyApplied Physics Letters, 1996
- Characterization and modeling of the n- and p-channel MOSFETs inversion-layer mobility in the range 25–125°CSolid-State Electronics, 1994