Average energy to form electron-hole pairs in GaP diodes with alpha particles
- 15 August 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (4) , 150-152
- https://doi.org/10.1063/1.1654321
Abstract
The energy required to form an electron‐hole pair in gallium phosphide has been measured using GaP p‐n junction diodes made from high‐purity‐level GaP materials. The values of εGaP for several GaP diodes for alpha particles ranged from 6.35 to 6.75 eV, with an average value of 6.54 ± 0.13 eV at 300°K. This value is smaller than that obtained by Goldstein and is very close to the value of 6.56 eV calculated from the experimental relationship ε = 2.596Eg + 0.714 (eV), which was derived previously from the experimental values of ε for Ge, Si, GaAs, and CdTe.This publication has 8 references indexed in Scilit:
- Performance of GaAs Surface-Barrier Detectors Made from High-Purity Gallium ArsenideIEEE Transactions on Nuclear Science, 1972
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy III. Effect of Holding Time at Growth TemperatureJapanese Journal of Applied Physics, 1971
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy II. Effect of Substrate OrientationJapanese Journal of Applied Physics, 1971
- CADMIUM TELLURIDE SURFACE BARRIER DETECTORSApplied Physics Letters, 1970
- Green and Red Electroluminescences from Diffused Gallium Phosphide p-n JunctionsJapanese Journal of Applied Physics, 1970
- Accurate determination of the ionization energy in semiconductor detectorsNuclear Instruments and Methods, 1968
- Electron-Hole Pair Creation in Gallium Phosphide by α ParticlesJournal of Applied Physics, 1965
- Primary Photocurrent in Cadmium SulfidePhysical Review B, 1957