Structure of IlI–V compound (110) surface regions from EPR data and elastic energy minimisation calculations
- 2 March 1979
- journal article
- Published by Elsevier in Surface Science
- Vol. 82 (1) , 102-108
- https://doi.org/10.1016/0039-6028(79)90321-2
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Surface and near‐surface atomic structure of GaAs (110)Journal of Vacuum Science and Technology, 1978
- Wave functions and (110) surface structure of III–V compoundsJournal of Vacuum Science and Technology, 1978
- Theory of reconstruction induced subsurface strain — application to Si(100)Surface Science, 1978
- Surface bond angle and bond lengths of rearranged As and Ga atoms on GaAs(110)Physical Review B, 1978
- Evidence for subsurface atomic displacements of the GaAs(110) surface from LEED/CMTA analysisSurface Science, 1978
- A comparison of LEED intensity data from chemically polished and cleaved GaAs(110) surfacesSurface Science, 1977
- Hyperfine structure in the EPR spectrum of O−2 on GaAs surfacesPhysics Letters A, 1977
- Semiconductor Surface Reconstruction: The Rippled Geometry of GaAs(110)Physical Review Letters, 1976
- Hyperfine interaction of adsorbed O2− with GaAs surface atomsPhysics Letters A, 1974
- Electron-Paramagnetic-Resonance Study of Clean and Oxygen-Exposed Surfaces of GaAs, AlSb, and Other III-V CompoundsPhysical Review B, 1971