Submicron Schottky-collector AlAs/GaAs resonant tunnel diodes
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Submicron modulation-doped field-effect transistor/metal–semiconductor–metal-based optoelectronic integrated circuit receiver fabricated by direct-write electron-beam lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Investigation of In0.53Ga0.47As/AlAs resonant tunneling diodes for high speed switchingApplied Physics Letters, 1992
- Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodesApplied Physics Letters, 1991
- High-speed resonant-tunneling diodes made from the In0.53Ga0.47As/AlAs material systemPublished by SPIE-Intl Soc Optical Eng ,1990
- Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodesApplied Physics Letters, 1989
- Electron Beam Lithography And Resist Processing For The Fabrication Of T-Gate StructuresPublished by SPIE-Intl Soc Optical Eng ,1989