Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes
- 20 May 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (20) , 2291-2293
- https://doi.org/10.1063/1.104902
Abstract
Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double-barrier resonant-tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W cm−2, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid-state electronic oscillator at room temperature.Keywords
This publication has 7 references indexed in Scilit:
- Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodesApplied Physics Letters, 1991
- Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodesApplied Physics Letters, 1989
- Resonant tunneling diodes for switching applicationsApplied Physics Letters, 1989
- Simulation of extrinsic bistability of resonant tunneling structuresApplied Physics Letters, 1988
- Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationary-state tunneling theoryJournal of Applied Physics, 1988
- Picosecond switching time measurement of a resonant tunneling diodeApplied Physics Letters, 1988
- High field transport in GaAs, InP and InAsSolid-State Electronics, 1984