The interpretation of dislocation contrast in x-ray topographs of GaAs1−x Px
- 1 November 1974
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (11) , 4730-4734
- https://doi.org/10.1063/1.1663126
Abstract
Misfit accommodation in epitaxially grown GaAs1−xPx was examined by x-ray topography which shows crosshatch contrast and by transmission electron microscopy which reveals individual misfit dislocations. Of these misfit dislocations 80% are glissile 60° dislocations and the remainder are perfect edge dislocations. Contrast considerations show that the x-ray images are fully compatible with the actual dislocation structure although they cannot resolve the individual dislocations.This publication has 13 references indexed in Scilit:
- Extended dislocations in GaAs0.7P0.3Applied Physics Letters, 1974
- High-Efficiency Zn-Diffused GaAs Electroluminescent DiodesJournal of Applied Physics, 1972
- A Cross-Hatch Pattern in GaAs[sub 1−x]P[sub x] Epitaxially Grown on GaAs SubstrateJournal of the Electrochemical Society, 1972
- Electroluminescence of Diffused GaAs1 − xPx Diodes with Low Donor ConcentrationsJournal of Applied Physics, 1969
- Dislocation morphology in graded heterojunctions: GaAs1?xPxJournal of Materials Science, 1969
- Optical observation of mismatch dislocations in GaAs luminescent diodesSolid State Communications, 1969
- Dislocations in GaAs17−xPxJournal of Applied Physics, 1969
- Compositional Inhomogeneities in GaAs1−xPx Alloy Epitaxial LayersJournal of Applied Physics, 1968
- LX. The formation of immobile dislocations during slipJournal of Computers in Education, 1952
- A dislocation reaction in the face-centred cubic latticeJournal of Computers in Education, 1951