Dependence of hot carrier luminescence on barrier thickness in GaAs/AlGaAs superlattices and multiple quantum wells
- 31 July 1990
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 75 (4) , 297-301
- https://doi.org/10.1016/0038-1098(90)90900-v
Abstract
No abstract availableKeywords
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