A new method of carrier trapping time measurement
- 4 December 2000
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 455 (3) , 645-655
- https://doi.org/10.1016/s0168-9002(00)00573-8
Abstract
No abstract availableKeywords
Funding Information
- Particle Physics and Astronomy Research Council
- Bundesministerium für Bildung und Forschung (05 7HH17I)
This publication has 7 references indexed in Scilit:
- Leakage current of hadron irradiated silicon detectors – material dependenceNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999
- Carrier lifetimes in heavily irradiated silicon diodesNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999
- Charge collection efficiency in heavily irradiated silicon diodesNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1998
- Determination of the Fermi level position for neutron irradiated high resistivity silicon detectors and materials using the transient charge technique (TChT)IEEE Transactions on Nuclear Science, 1994
- The use of the signal current pulse shape to study the internal electric field profile and trapping effects in neutron damaged silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1993
- Radiation damage of silicon detectors by monoenergetic neutrons and electronsNuclear Physics B - Proceedings Supplements, 1991
- Neutron yields from thick Be targets bombarded with deuterons or protonsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1989