Indirect exchange interaction in parabolic symmetry-induced zero gap semiconductors

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Abstract
The indirect exchange interaction between two localized spins is calculated, taking into account the virtual interband transitions across the zero gap. This interaction decreases like R-4, where R is the distance between two spins, and is antiferromagnetic for all existing materials. The sign of the interaction crucially depends on the band structure. The calculated Curie-Weiss temperature of Hg1-xMnxTe alloys with low x is in good agreement with the experiments