Microstructure modification of TiN by ion bombardment during reactive sputter deposition
Top Cited Papers
- 3 October 2002
- journal article
- Published by Elsevier
- Vol. 169 (2) , 299-314
- https://doi.org/10.1016/0040-6090(89)90713-x
Abstract
No abstract availableKeywords
This publication has 33 references indexed in Scilit:
- Ion-beam-induced epitaxial vapor-phase growth: A molecular-dynamics studyPhysical Review B, 1987
- Optical constants of thin TiN films: thickness and preparation effectsApplied Optics, 1986
- Optical and electrical properties of thin silver films grown under ion bombardmentPhysical Review B, 1986
- Cross‐Section preparation for tem of film‐substrate combinations with a large difference in sputtering yieldsJournal of Electron Microscopy Technique, 1986
- Adhesion of titanium nitride coatings on high-speed steelsJournal of Vacuum Science & Technology A, 1985
- The development of grain structure during growth of metallic filmsActa Metallurgica, 1984
- Kinetics of nitride formation on titanium targets during reactive sputteringSurface Science, 1983
- Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part ICritical Reviews in Solid State and Materials Sciences, 1983
- A high rate sputtering process for the formation of hard friction-reducing TiN coatings on toolsThin Solid Films, 1982
- Chemical reactions of N2+ ion beams with first-row transition metalsThe Journal of Physical Chemistry, 1979