The Hall effect in tin
- 1 January 1971
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 23 (181) , 175-189
- https://doi.org/10.1080/14786437108216371
Abstract
Measurements of the Hall voltage have been made on several specimens of high purity tin at liquid helium temperatures and in magnetic fields up to 4·5 T. The field dependence has been studied for field directions 0 to 51° from the c axis. In the range 0 to 1½°, the behaviour has been explained in terms of the conversion by magnetic breakdown (MB) of electron orbits into a network of coupled hole orbits. The linking by MB of open orbits to form closed hole orbits accounts for the behaviour in the range 16° to 38°. The occurrence of oscillations in the Hall voltage provides further evidence for these interpretations. The breakdown field, B 0 has been found to depend on height, kz, above the central (0.01) plane according to the relation B0=(0.9±0.1)+(4.0±0.3) × 10−18kz 2.Keywords
This publication has 9 references indexed in Scilit:
- Oscillatory Hall effect in tin due to magnetic breakdownProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1970
- Oscillations in the Magnetoconductivity of a Two-Dimensional Coherent Network of Coupled OrbitsPhysical Review B, 1969
- Magnetoresistance of a phase-coherent network of coupled orbitsPhilosophical Magazine, 1968
- de Haas-van Alphen Effect and Fermi Surface of White TinPhysical Review B, 1968
- Magnetic Breakdown Effects in Helicon Propagation in White TinPhysical Review B, 1968
- Magnetoresistance of Tin Over a Large Range of Magnetic FieldsPhysical Review B, 1968
- Magnetoresistance and Coupled Orbits in TinPhysical Review B, 1966
- Band Structure and Fermi Surface of White TinPhysical Review B, 1966
- Quantization of coupled orbits in metalsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1962