High speed (10-20 ns) non-volatile MRAM with folded storage elements
- 1 September 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 28 (5) , 2359-2361
- https://doi.org/10.1109/20.179491
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- 10-35 nanosecond magnetoresistive memoriesIEEE Transactions on Magnetics, 1990
- Dynamic switching process of sandwich-structured MR elementsIEEE Transactions on Magnetics, 1989