Photoemission study of the Al-Sb(111) interface
- 15 May 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (15) , 7927-7935
- https://doi.org/10.1103/physrevb.35.7927
Abstract
We have studied the interface formation between Sb(111) surfaces and evaporated aluminum with photoemission using synchrotron radiation. Energy distribution curves were measured from the Al 2p and Sb 4d core levels and from the valence band. A curve-fitting procedure was applied to the core-level spectra in order to decompose the peaks into individual components. A model calculation was performed to explain the intensity variation of the different Al 2p components. We show that a two-dimensional layer of AlSb is formed and that Al clusters grow on top of AlSb as soon as a fraction of a monolayer of AlSb is present. This also explains the behavior of the Sb 4d integrated peak areas and of the valence-band energy distribution curves. Finally, partial-yield spectra have been measured in order to assess the AlSb formation and to study the Al 2p exciton.Keywords
This publication has 30 references indexed in Scilit:
- Deposition of indium on Sb(111) single crystal: A low energy electron diffraction, Auger, and x-ray photoelectron spectroscopy interface investigationJournal of Vacuum Science & Technology A, 1986
- Free-exciton luminescence in GaSb quantum wells confined by short-period AlSb-GaSb superlatticesApplied Physics Letters, 1985
- The interface between (100) InP and epitaxially grown AlJournal of Vacuum Science & Technology B, 1985
- Interfacial constraints on device performanceJournal of Vacuum Science & Technology B, 1984
- The role of interfaces in ultrasmall semiconductor devicesJournal of Vacuum Science & Technology B, 1984
- On the properties of InSb quantum wellsSolid-State Electronics, 1984
- Structure of the Al–GaP(110) and Al–InP(110) interfacesJournal of Vacuum Science & Technology B, 1983
- Growth of Sb and InSb by molecular-beam epitaxyJournal of Applied Physics, 1981
- Atomic geometry of Al−GaAs interfaces: GaAs (110)–p(1 × 1)–Al(ϑ), 0?ϑ?8.5 monolayersJournal of Vacuum Science and Technology, 1981
- Atomic interdiffusion at Au-Al/GaAs interfacesApplied Physics Letters, 1980