Atomic interdiffusion at Au-Al/GaAs interfaces
- 15 February 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (4) , 326-328
- https://doi.org/10.1063/1.91480
Abstract
A new technique has been developed to probe metal‐semiconductor interdiffusion on an atomic scale. With reacted Al atoms as markers at microscopic Au/GaAs (110) interfaces, soft x‐ray photoemission studies reveal both Au indiffusion and nonstoichiometric Ga and As outdiffusion at room temperature.Keywords
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