Electronic properties of the two-dimensional system at GaAs/AlxGa1−xAs interfaces
- 31 August 1980
- journal article
- Published by Elsevier in Surface Science
- Vol. 98 (1-3) , 117-125
- https://doi.org/10.1016/0039-6028(80)90481-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Inelastic Light Scattering from a Quasi-Two-Dimensional Electron System in GaAs-HeterojunctionsPhysical Review Letters, 1979
- Resonance enhancement of Raman scattering by electron-gas excitations of n-GaAsSolid State Communications, 1979
- Two-dimensional electron gas at a semiconductor-semiconductor interfaceSolid State Communications, 1979
- Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAsApplied Physics A, 1978
- Quantum properties of strong accumulation layers on ZnO surfacesSurface Science, 1976