Electron traps in ZnSe grown by liquid-phase epitaxy
- 1 February 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (2) , 1018-1022
- https://doi.org/10.1063/1.330511
Abstract
Deep electron levels in n-type liquid phase epitaxial ZnSe have been studied using thermally stimulated capacitance, photocapacitance, and deep level transient spectroscopy (DLTS). Electron traps have been observed with activation energies of 0.17, ∼0.3, 0.64, and 1.4 eV below the conduction band. The electron emission-rate dependence on temperature as measured by DLTS has been found to vary among samples for the 0.3 eV level.This publication has 19 references indexed in Scilit:
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