Effects of certain growth parameters on hole and electron traps in LPE GaAs
- 31 October 1987
- journal article
- Published by Elsevier in Materials Letters
- Vol. 5 (11-12) , 479-483
- https://doi.org/10.1016/0167-577x(87)90069-3
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Deep levels and growth conditions of LPE GaAs crystalsJournal of Crystal Growth, 1978
- Hole traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- A study of deep levels in GaAs by capacitance spectroscopyJournal of Electronic Materials, 1975