Near-Room-Temperature Photopumped Blue Lasers in ZnSxSe1-x/ZnSe Multilayer Structures
- 1 December 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (12A) , L2420
- https://doi.org/10.1143/jjap.29.l2420
Abstract
Photopumped blue laser oscillation was achieved up to near room temperature (280 K) in a ZnS0.18Se0.82/ZnSe multilayer structure grown by MOVPE. This significant improvement in the lasing temperature is attributed to the higher heterobarrier which prevents thermoionic emission and to the multilayer structure which has an average lattice constant matched to the GaAs substrate at the growth temperature of 515°C. The threshold excitation optical power density below 200 K where the thermoionic emission is negligible is less than 50 kW/cm2, which corresponds to a current density of 14 kA/cm2.Keywords
This publication has 13 references indexed in Scilit:
- Photopumped lasing in ZnSSe/ZnSe multilayer structures up to 210 KJournal of Crystal Growth, 1990
- Characterization of Nitrogen-Doped ZnSe and ZnS0.06Se0.94 Films Grown by Metal-Organic Vapor-Phase EpitaxyJapanese Journal of Applied Physics, 1988
- Optical characterization and band offsets in ZnSe- strained-layer superlatticesPhysical Review B, 1988
- Nitrogen Doped p-Type ZnSe Layer Grown by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1988
- Growth of p-type ZnSe:Li by molecular beam epitaxyApplied Physics Letters, 1988
- Metalorganic vapor phase epitaxy of low-resistivity p-type ZnSeApplied Physics Letters, 1988
- Polarization-dependent optical gain and absorption spectra of (Cd,Mn)Te and (Zn,Mn)Se multiple quantum well structuresApplied Physics Letters, 1987
- Electron beam pumped lasing in ZnSe grown by molecular beam epitaxyApplied Physics Letters, 1987
- Electron beam pumped II–VI lasersJournal of Crystal Growth, 1985
- Visible Stimulated Emission in Ternary Chalcopyrite Sulfides and SelenidesApplied Physics Letters, 1971