0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHz
- 1 August 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (8) , 374-376
- https://doi.org/10.1109/55.748
Abstract
The authors report the DC and RF performance of nominally 0.2- mu m-gate length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As modulation-doped field-effect transistors (MODFETs) with f/sub T/ over 120 GHz. The devices exhibit a maximum two-dimensional electron gas (2 DEG) sheet density of 2.4*10/sup 12/ cm/sup -2/, peak transconductance g/sub m/ of 530-570 mS/mm. maximum current density of 500-550 mA/mm, and peak current-gain cutoff frequency f/sub T/ of 110-122 GHz. These results are claimed to be among the best ever reported for pseudomorphic AlGaAs/InGaAs MODFETs and are attributed to the high 2 DEG sheet density, rather than an enhanced saturation velocity, in the In/sub 0.25/Ga/sub 0.75/As channel.Keywords
This publication has 8 references indexed in Scilit:
- The role of inefficient charge modulations in limiting the current-gain cutoff frequency of the MODFETIEEE Transactions on Electron Devices, 1988
- Charge control, DC, and RF performance of a 0.35- mu m pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistorIEEE Transactions on Electron Devices, 1988
- IIA-5 Pulse-doped AlGaAs/InGaAs pseudomorphic MODFET'sIEEE Transactions on Electron Devices, 1987
- Comments on "A new low-noise AlGaAs/GaAs 2DEG FET with a surface undoped layer"IEEE Transactions on Electron Devices, 1987
- Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistorIEEE Electron Device Letters, 1986
- High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistorsIEEE Electron Device Letters, 1985
- An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMTIEEE Electron Device Letters, 1985
- Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAsJournal of Applied Physics, 1980