65 nm physical gate length NMOSFETs with heavy ion implanted pockets and highly reliable 2 nm-thick gate oxide for 1.5 V operation
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
For the first time, 65 nm physical gate length NMOS devices combining heavy ion (gallium, indium) implanted pockets and low leakage, highly reliable 2 nm-thick gate oxide are reported. Indium pockets allow us to obtain 0.33 V threshold voltage, low off-state leakage current (<6/spl times/10/sup -7/ A//spl mu/m) devices, usable for 1.5 V operation. The weak influence of pockets on NMOSFET reliability is demonstrated: extrapolated lifetime of 65 nm indium pocket devices at 1.65 V drain bias exceeds 27 years, which is consistent with 1.5 V operation.Keywords
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