Saturation capacitance of thin oxide MOS structures and the effective surface density of states of silicon
- 30 April 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (4) , 335-339
- https://doi.org/10.1016/0038-1101(74)90125-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Normalization of wave functions in an MIS structureSolid-State Electronics, 1972
- Quantum mechanical calculation of the carrier distribution and the thickness of the inversion layer of a MOS field-effect transistorSolid-State Electronics, 1970
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Space Charge Calculations for SemiconductorsJournal of Applied Physics, 1958