Orientation filtering by growth-velocity competition in zone-melting recrystallization of silicon on SiO2
- 15 December 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (12) , 1126-1128
- https://doi.org/10.1063/1.94255
Abstract
We describe a method of controlling the in‐plane 〈100〉 directions of grains in (100)‐textured silicon films produced by zone‐melting recrystallization over amorphous SiO2. Grains having in‐plane orientation within a narrow range are able to grow through an orientation filter consisting of a pattern of crystallization barriers, while grains having other orientations are occluded. The results of experiments using an orientation filter, and the parameters which optimize filter performance, are reported.Keywords
This publication has 12 references indexed in Scilit:
- Solidification‐Front Modulation to Entrain Subboundaries in Zone‐Melting Recrystallization of Si on SiO2Journal of the Electrochemical Society, 1983
- Halogen lamp recrystallization of silicon on insulating substratesJournal of Applied Physics, 1983
- Recrystallization of polysilicon films using incoherent lightMaterials Letters, 1982
- Zone‐Melting Recrystallization of Si Films with a Moveable‐Strip‐Heater OvenJournal of the Electrochemical Society, 1982
- Arc lamp zone melting and recrystallization of Si films on oxidized silicon substratesApplied Physics Letters, 1982
- Orientation selection by zone-melting silicon films through planar constrictionsApplied Physics Letters, 1982
- An Etch Pit Technique for Analyzing Crystallographic Orientation in Si FilmsJournal of the Electrochemical Society, 1982
- Cellular growth in micro-zone melted siliconMaterials Letters, 1982
- Zone-melting recrystallization of encapsulated silicon films on SiO2—morphology and crystallographyApplied Physics Letters, 1982
- Improved techniques for growth of large-area single-crystal Si sheets over SiO2 using lateral epitaxy by seeded solidificationApplied Physics Letters, 1981