Structure and polarization in epitaxial ferroelectric PbZr0.52Ti0.48O3/YBa2Cu3O7−x/Nd:YAlO3 thin films
- 2 February 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (5) , 620-622
- https://doi.org/10.1063/1.120824
Abstract
We fabricate epitaxial submicron film ferroelectric/superconductor heterostructures on the single-crystal substrate by the pulsed laser deposition technique. Frequency independent low loss and dielectric constant of 950, high electric resistivity ρ remnant polarization of no visible fatigue after short bipolar pulses switching indicate excellent electrical performance of the new capacitor structure. The slight crystallite polar axis misalignment and depolarizing effect were found to be responsible for the shape of the apparent polarization loop. The only fitting parameter depolarizing coefficient gives the best fit between theory and experimental data and corresponds to prolate ellipsoidal shaped crystallites with the length-to-diameter ratio of 140.
Keywords
This publication has 8 references indexed in Scilit:
- Laser-Ablation Deposition and Characterization of Ferroelectric Capacitors for Nonvolatile MemoriesMRS Bulletin, 1996
- In-plane orientation of c-axis-oriented Bi2Sr2Can−1CunO2n+4+δ thin films on Nd:YAlO3 substratesJournal of Applied Physics, 1995
- Low voltage electron emission from Pb(ZrxTi1−x)O3-based thin film cathodesApplied Physics Letters, 1995
- Pulse measurements on ferroelectric capacitors simulating memory switchingApplied Physics Letters, 1994
- Effects of disturbing pulses on the switchable polarization of Pb(ZrTi)O3 thin film capacitorsApplied Physics Letters, 1994
- Anion-assisted pulsed laser deposition of lead zirconate titanate filmsApplied Physics Letters, 1992
- Nearly Untwinned Superconducting Bi2Sr2CuOy Thin Films Grown on (Y, Nd)AlO3 (001) SubstrateJapanese Journal of Applied Physics, 1991
- Ferroelectric MemoriesScience, 1989