Semiconductor interfaces studied by scanning tunneling microscopy and potentiometry
- 1 March 1987
- journal article
- Published by Elsevier in Surface Science
- Vol. 181 (1-2) , 324-332
- https://doi.org/10.1016/0039-6028(87)90173-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Wide-range, low-operating-voltage, bimorph STM: Application as potentiometerIBM Journal of Research and Development, 1986
- Scanning tunneling potentiometryApplied Physics Letters, 1986
- Scanning tunneling microscope combined with a scanning electron microscopeReview of Scientific Instruments, 1986
- Surface morphology of GaAs(110) by scanning tunneling microscopyPhysical Review B, 1985
- Voltage drop in the experiments of scanning tunneling microscopy for SiPhysical Review B, 1984
- Surface Studies by Scanning Tunneling MicroscopyPhysical Review Letters, 1982
- Tunneling through a controllable vacuum gapApplied Physics Letters, 1982
- Electronic surface properties of uhv-cleaved III–V compoundsSurface Science, 1977
- Electronic surface properties of III–V semiconductors: Excitonic effects, band-bending effects, and interactions with Au and O adsorbate layersJournal of Vacuum Science and Technology, 1976
- Tunneling Spectroscopy in GaAsPhysical Review B, 1967