Solubility of nitrogen in binary III–V systems
- 1 June 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 178 (1-2) , 1-7
- https://doi.org/10.1016/s0022-0248(97)00078-x
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Tensile strain relaxation in GaNxP1−x (x≤0.1) grown by chemical beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995
- Gas-Source Molecular Beam Epitaxy of GaNxAs1-x Using a N Radical as the N SourceJapanese Journal of Applied Physics, 1994
- Growth of GaAsN alloys by low-pressure metalorganic chemical vapor deposition using plasma-cracked NH3Applied Physics Letters, 1993
- Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy LayersJapanese Journal of Applied Physics, 1992
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Crystal growth of GaP doped with nitrogen under high nitrogen pressureJournal of Crystal Growth, 1985
- Calculation of ternary and quaternary III–V phase diagramsJournal of Crystal Growth, 1974
- Calculation of the Solubility and Solid-Gas Distribution Coefficient of N in GaPJournal of the Electrochemical Society, 1972