Effect of an oxidized Ni/Au p contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes
- 15 January 2001
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 89 (2) , 1506-1508
- https://doi.org/10.1063/1.1334631
Abstract
Feasibility of an oxidized Ni/Au p contact on some aspects of device applications for a GaN/InGaN multiple quantum well light-emitting diode (LED) was investigated. For the oxidation of Ni/Au p contact, furnace annealing of a completely fabricated LED was performed at 600 °C for 5 min in an O2 ambient. For the case of LED with an oxidized Ni/Au system, the I–V measurements showed a reduction in series resistance of the diode by 17.2%. In addition, the optical output power of the oxidized LED was increased by a factor of 2. However, a significant degradation in reliability characteristics was observed, which might detract from the direct application of the Ni/Au oxidation process. We also conclude that the improvement of oxidized Ni/Au contact properties is mainly due to the formation of an intermediate NiO layer, rather than an enhancement in p-type activation.This publication has 10 references indexed in Scilit:
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