InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN
- 28 April 2000
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (9) , 4464-4466
- https://doi.org/10.1063/1.373092
Abstract
The fabrication and characterization of an InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt thin film as a current spreading layer are described. The room temperature electroluminescence exhibits a strong emission at 453 nm. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. The light transmittance and the specific contact resistance of a Pt thin film with a thickness of 8 nm on p-GaN was determined to be 85% at 450 nm and Ω cm2, demonstrating that a Pt thin film can be used as an effective current spreading layer with high light transparency.
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