Schottky barriers and contact resistances on p-type GaN
- 2 December 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (23) , 3537-3539
- https://doi.org/10.1063/1.117237
Abstract
We measured the Schottky barrier heights and specific contact resistivities of four different metals on p‐type GaN. The Schottky barrier heights of Pt, Ni, Au, and Ti were obtained from the current‐voltage characteristics to be 0.50, 0.50, 0.57, and 0.65 eV, respectively. The specific contact resistivities were 0.013, 0.015, 0.026, and 0.035 Ω⋅cm2, respectively. Our experimental results proved that the Schottky barrier heights and specific contact resistivities decrease with increase in metal work function as expected theoretically.Keywords
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