High-power InGaN/GaN double-heterostructure violet light emitting diodes
- 10 May 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (19) , 2390-2392
- https://doi.org/10.1063/1.109374
Abstract
InGaN/GaN double‐heterostructure light‐emitting diodes were fabricated. The output power was 90 μW and the external quantum efficiency was as high as 0.15% at a forward current of 20 mA at room temperature. The peak wavelengths of the electroluminescence(EL) varied between 411 and 420 nm with changes in the growth temperatures of an InGaN active layer between 820 and 800 °C. The full widths at half maximum of EL were between 22 and 25 nm.Keywords
This publication has 15 references indexed in Scilit:
- Blue and green diode lasers in ZnSe-based quantum wellsApplied Physics Letters, 1992
- Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structuresApplied Physics Letters, 1992
- High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1991
- Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxyApplied Physics Letters, 1991
- Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer LayersJapanese Journal of Applied Physics, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Properties of Ga1-xInxN Films Prepared by MOVPEJapanese Journal of Applied Physics, 1989
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986