Electrical characterisation of Ti Schottky barrierson n -type GaN
- 26 May 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (11) , 909-911
- https://doi.org/10.1049/el:19940565
Abstract
The Schottky barrier height of Ti on n-type GaN has been measured to be 0.58 and 0.59 eV by capacitance-voltage and current-voltage techniques, respectively. This work is of particular interest because it is the first measure of the Schottky barrier height on GaN for a metal other than Au. The barrier height of Ti on GaN is significantly less than that of Au. This supports the prediction that the Fermi level is not pinned at the GaN surface.Keywords
This publication has 8 references indexed in Scilit:
- Low resistance ohmic contacts on wide band-gap GaNApplied Physics Letters, 1994
- Schottky barrier on n-type GaN grown by hydride vapor phase epitaxyApplied Physics Letters, 1993
- Metal contacts to gallium nitrideApplied Physics Letters, 1993
- Metal semiconductor field effect transistor based on single crystal GaNApplied Physics Letters, 1993
- High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayersApplied Physics Letters, 1992
- A note on the correlation between the Schottky-diode barrier height and the ideality factor as determined from I-V measurementsIEEE Electron Device Letters, 1983
- Approximations for Fermi-Dirac integrals, especially the function F12(η) used to describe electron density in a semiconductorSolid-State Electronics, 1982
- Chemical trends of Schottky barriers: A reexamination of some basic ideasJournal of Vacuum Science and Technology, 1978