High performance AlGaN/GaN HEMT with improved Ohmiccontacts
- 26 November 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (24) , 2354-2356
- https://doi.org/10.1049/el:19981618
Abstract
Various metal films and rapid thermal annealing conditions were investigated to improve the Ohmic contact to AlGaN/GaN heterostuctures. Less than 1 Ω.mm contact resistance has been obtained reproducibly. Our best contact resistivity reaches 0.039 Ω.mm, corresponding to a contact resistance of 5.38 × 10–8 Ω.cm2. The fabricated high electron mobility transistors with a 0.25 µm length gate exhibit a cutoff frequency fT of 60 GHz and an fmax of 100 GHz.Keywords
This publication has 6 references indexed in Scilit:
- High power RF operation of AlGaN/GaN HEMTs grown on insulating silicon carbide substratesElectronics Letters, 1998
- High Al-content AlGaN/GaN MODFETs for ultrahigh performanceIEEE Electron Device Letters, 1998
- High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistorIEEE Electron Device Letters, 1998
- High transconductance AlGaN/GaN heterostructurefield effect transistors on SiC substratesElectronics Letters, 1997
- High speed high power AlGaN/GaN heterostructure field effect transistors with improved ohmic contactsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1997
- Very low resistance multilayer Ohmic contact to n-GaNApplied Physics Letters, 1996