A lateral, unidirectional, bipolar-type insulated-gate transistor—A novel semiconductor device

15 March 1982

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 40 (6) , 528-529
https://doi.org/10.1063/1.93130

Abstract

A lateral, unidirectional, bipolar-type insulated-gate transistor (Lubistor) is newly proposed. It has three features: a p+-n (or p)-n+ structure, an insulated gate on the n(or p) region, and the thickness of the n(or p) region is approximately equal to or less than the effective Debye length. It is shown that the Lubistor has triodelike current-voltage characteristics, and that the characteristic curve shifts continuously toward a high anode-to-cathode bias along the anode-to-cathode voltage axis when the gate-to-cathode voltage enhances the majority-carrier concentration in the channel region.

Keywords

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