Growth and equilibrium structures in the epitaxy of Si on Si(001)
- 20 November 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 63 (21) , 2393-2396
- https://doi.org/10.1103/physrevlett.63.2393
Abstract
Scanning-tunneling-microscopy measurements of submonolayer growth of Si on Si(001) show anisotropic island shapes. From coarsening experiments it is determined that these shapes are a consequence of the growth kinetics. They can be explained by a lateral accommodation coefficient for atoms arriving at the edge of islands that differs by an order of magnitude at the ends and at the sides of dimer rows.Keywords
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