XPS study of overlayer formation on a-Si (H) due to high dose ion implantation
- 1 December 1984
- journal article
- Published by Springer Nature in Journal of Materials Science Letters
- Vol. 3 (12) , 1109-1111
- https://doi.org/10.1007/bf00719780
Abstract
No abstract availableKeywords
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- Doping of amorphous silicon by alkali-ion implantationsPhilosophical Magazine Part B, 1979