Study on Growth Processes of Subnanometer Particles in Early Phase of Silane RF Discharge
- 1 July 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (7S)
- https://doi.org/10.1143/jjap.33.4212
Abstract
Growth processes of particles formed in an early phase of silane RF plasmas are investigated using the modified Langmuir probe, spectroscopic and photodetachment methods. From the probe measurements, the particles are estimated to be on the order of subnanometer size, and they are found to nucleate and grow principally around the plasma/sheath boundary near the RF electrode, where optical emission intensity of SiH radicals is high. These spatial profiles are different from those of positive and negative ion densities during discharging periods. These results suggest that many short-lifetime neutral radicals are necessary for the nucleation and subsequent growth of a particle. The photodetachment experiments and scanning electron microscope (SEM) observation also show that the particles are in the size ranges below about 200 atoms and about 1 nm. Spatial profile measurements of probe currents and negatively charged particle density obtained by the photodetachment method confirm that the mass of the particles around the plasma/sheath boundary near the RF electrode is large.Keywords
This publication has 9 references indexed in Scilit:
- Novel in situ method to detect subnanometer-sized particles in plasmas and its application to particles in helium-diluted silane radio frequency plasmasApplied Physics Letters, 1994
- Plasma diagnostics in negative ion sourcesPlasma Sources Science and Technology, 1993
- Growth Kinetics and Behavior of Dust Particles in Silane PlasmasJapanese Journal of Applied Physics, 1993
- Study of growth kinetics and behaviour of particles in a helium-silane RF plasma using laser diagnostic methodsPlasma Sources Science and Technology, 1993
- Binding energies and electron affinities of small silicon clusters (n=2–5)The Journal of Chemical Physics, 1992
- Sequential clustering reactions of SiD+3 with SiD4 and SiH+3 with SiH4: Another case of arrested growth of hydrogenated silicon particlesThe Journal of Chemical Physics, 1990
- Spherical shell model of an asymmetric rf dischargeJournal of Applied Physics, 1989
- Absolute rate constants for the reaction of silylene with hydrogen, silane, and disilaneThe Journal of Chemical Physics, 1988
- Photodetachment and photofragmentation studies of semiconductor cluster anionsThe Journal of Chemical Physics, 1986