Performance of p+−n HgCdTe photodiodes
- 30 November 1992
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 33 (6) , 463-473
- https://doi.org/10.1016/0020-0891(92)90061-w
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Mercury cadmium telluride junctions grown by liquid phase epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Growth and characterization of P-on-n HgCdTe liquid-phase epitaxy heterojunction material for 11–18 μm applicationsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Molecular-beam epitaxy growth and i n s i t u arsenic doping of p-on-n HgCdTe heterojunctionsJournal of Applied Physics, 1991
- P-on-n arsenic-activated junctions in MOCVD LWIR HgCdTe/GaAsSemiconductor Science and Technology, 1990
- Long and middle wavelength infrared photodiodes fabricated with Hg1−x CdxTe grown by molecular-beam epitaxyJournal of Applied Physics, 1989
- Intrinsic infrared detectorsProgress in Quantum Electronics, 1988
- Computer modeling of carrier transport in (Hg,Cd)Te photodiodesJournal of Applied Physics, 1986
- Background and temperature dependent current-voltage characteristics of HgCdTe photodiodesJournal of Applied Physics, 1982
- Theory of the Flow of Electrons and Holes in Germanium and Other SemiconductorsBell System Technical Journal, 1950
- Theory of Impurity Scattering in SemiconductorsPhysical Review B, 1950